IGCT器件 | Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units
Chen, Zhengyu; Yu, Zhanqing; Liu, Xuan; Liu, Jiapeng; Zeng, Rong
（Department of Electrical Engineering, Tsinghua University, Beijing, 100084, China）
Abstract:
Turn-off capability of integrated gate-commutated thyristor is highly dependent on the commutation capability of its gate driver unit (GDU). To enhance it, stray impedance is the crucial limitation, which has not been obtained accurately before. Thus, in this paper, acquisition method of impedance based on experimental measurements was carefully analyzed, including electrolytic and ceramic capacitors, mosfets, printed circuit board, and GCT housing. And each part of stray impedance was obtained based on a series of experiments with 6-inch GCTs and two types of conventional GDUs. To further enhance commutation speed, an improved GDU was developed, reducing the total stray inductance from 0.395 to 0.037 nH, stray resistance from 0.444 to 0.227 mΩ. An extremely high current of 12.5 kA was successfully turned off, which is the maximum turn-off current level so far. Besides, the maximum commutation capability was tested as over 17 kA. Consequently, no further optimization of GDU is necessary. However, there was still about 1.0 nH existing inside the GCT housing we used. A novel housing with lower stray inductance is expected for higher commutation speed in the future.
Published in: IEEE Transactions on Power Electronics ( Volume: 34 , Issue: 7 , July 2019 )
Page(s): 6639 - 6647
Date of Publication: 12 April 2018
Cite this:
Z. Chen, Z. Yu, X. Liu, J. Liu and R. Zeng, "Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units," in IEEE Transactions on Power Electronics, vol. 34, no. 7, pp. 6639-6647, July 2019.