IGCT器件 | Integrated Gate Commutated Thyristor-Based Modular Multilevel Converters: A Promising Solution for High-Voltage dc Applications
Zeng, Rong; Zhao, Biao; Wei, Tianyu; Xu, Chaoqun; Chen, Zhengyu; Liu, Jiapeng; Zhou, Wenpeng; Song, Qiang; Yu, Zhanqing
（Department of Electrical Engineering, Tsinghua University, Beijing, 100084, China）
Abstract:
The IGCT has potential advantages in terms of efficiency, reliability, and cost for MMC applications. However, the large anode reactor, complex low potential power supply scheme, and high driving power limit the application of IGCTs in power electronics systems. We presented a comprehensive analysis, design, and experiments of IGCT MMCs for HVdc applications. With the proposed optimal design solutions, the anode reactor of the IGCT MMC was reduced greatly. Moreover, the self-excitation power supply scheme of the IGCT from the dc -link capacitor of the MMC was achieved, and the low -frequency operation of MMC in HVdc applications greatly reduced the driving power of the IGCT. A comprehensive experimental platform was developed. The detailed experiments, including double -pulse switching, back-to-back power cycling, and MMC operation, verify the correctness and effectiveness of the proposed solution.
Published in: IEEE Industrial Electronics Magazine ( Volume: 13 , Issue: 2 , June 2019 )
Page(s): 4 - 16
Date of Publication: 24 June 2019
Cite this:
R. Zeng et al., "Integrated Gate Commutated Thyristor-Based Modular Multilevel Converters: A Promising Solution for High-Voltage dc Applications," in IEEE Industrial Electronics Magazine, vol. 13, no. 2, pp. 4-16, June 2019.